Brennan, Kevin F., 1956-
Theory of modern electronic semiconductor devices / Kevin F. Brennan, April S. Brown. - New York : John Wiley, c2002. - xiii, 448 p. : ill. ; 24 cm.
"A Wiley-Interscience publication."
Includes bibliographical references (p. 419-431) and index.
Overview of Semiconductor Device Trends -- Moore's Law and Its Implications -- Semiconductor Devices for Telecommunications -- Digital Communications -- Semiconductor Heterostructures -- Formation of Heterostructures -- Modulation Doping -- Two-Dimensional Subband Transport at Heterointerfaces -- Strain and Stress at Heterointerfaces -- Perpendicular Transport in Heterostructures and Superlattices -- Heterojunction Materials Systems: Intrinsic and Extrinsic Properties -- Heterostructure Field-Effect Transistors -- Motivation -- Basics of Heterostructure Field-Effect Transistors -- Simplified Long-Channel Model of a MODFET -- Physical Features of Advanced State-of-the-Art MODFETs -- High-Frequency Performance of MODFETs -- Materials Properties and Structure Optimization for HFETs -- Heterostructure Bipolar Transistors -- Review of Bipolar Junction Transistors -- Emitter-Base Heterojunction Bipolar Transistors -- Base Transport Dynamics -- Nonstationary Transport Effects and Breakdown -- High-Frequency Performance of HBTs -- Materials Properties and Structure Optimization for HBTs -- Transferred Electron Effects, Negative Differential Resistance, and Devices -- k-Space Transfer -- Real-Space Transfer -- Consequences of NDR in a Semiconductor -- Transferred Electron-Effect Oscillators: Gunn Diodes -- Negative Differential Resistance Transistors -- IMPATT Diodes -- Resonant Tunneling and Devices -- Physics of Resonant Tunneling: Qualitative Approach -- Physics of Resonant Tunneling: Envelope Approximation.
0471415413 (alk. paper) 9780471415411 (alk. paper)
2002280958
Semiconductors.
TK7871.85 / .B684 2002
621.3815/2
Theory of modern electronic semiconductor devices / Kevin F. Brennan, April S. Brown. - New York : John Wiley, c2002. - xiii, 448 p. : ill. ; 24 cm.
"A Wiley-Interscience publication."
Includes bibliographical references (p. 419-431) and index.
Overview of Semiconductor Device Trends -- Moore's Law and Its Implications -- Semiconductor Devices for Telecommunications -- Digital Communications -- Semiconductor Heterostructures -- Formation of Heterostructures -- Modulation Doping -- Two-Dimensional Subband Transport at Heterointerfaces -- Strain and Stress at Heterointerfaces -- Perpendicular Transport in Heterostructures and Superlattices -- Heterojunction Materials Systems: Intrinsic and Extrinsic Properties -- Heterostructure Field-Effect Transistors -- Motivation -- Basics of Heterostructure Field-Effect Transistors -- Simplified Long-Channel Model of a MODFET -- Physical Features of Advanced State-of-the-Art MODFETs -- High-Frequency Performance of MODFETs -- Materials Properties and Structure Optimization for HFETs -- Heterostructure Bipolar Transistors -- Review of Bipolar Junction Transistors -- Emitter-Base Heterojunction Bipolar Transistors -- Base Transport Dynamics -- Nonstationary Transport Effects and Breakdown -- High-Frequency Performance of HBTs -- Materials Properties and Structure Optimization for HBTs -- Transferred Electron Effects, Negative Differential Resistance, and Devices -- k-Space Transfer -- Real-Space Transfer -- Consequences of NDR in a Semiconductor -- Transferred Electron-Effect Oscillators: Gunn Diodes -- Negative Differential Resistance Transistors -- IMPATT Diodes -- Resonant Tunneling and Devices -- Physics of Resonant Tunneling: Qualitative Approach -- Physics of Resonant Tunneling: Envelope Approximation.
0471415413 (alk. paper) 9780471415411 (alk. paper)
2002280958
Semiconductors.
TK7871.85 / .B684 2002
621.3815/2