Includes bibliographical references and index.

1.1 Semiconductor Devices 1 -- 1.2 Semiconductor Technology 7 -- Part I Semiconductor Physics -- Chapter 2 Energy Bands and Carrier Concentration in Thermal Equilibrium 17 -- 2.1 Semiconductor Materials 17 -- 2.2 Basic Crystal Structure 19 -- 2.3 Basic Crystal Growth Technique 24 -- 2.4 Valence Bonds 27 -- 2.5 Energy Bands 28 -- 2.6 Intrinsic Carrier Concentration 34 -- 2.7 Donors and Acceptors 37 -- Chapter 3 Carrier Transport Phenomena 47 -- 3.1 Carrier Drift 48 -- 3.2 Carrier Diffusion 57 -- 3.3 Generation and Recombination Processes 60 -- 3.4 Continuity Equation 66 -- 3.5 Thermionic Emission Process 72 -- 3.6 Tunneling Process 73 -- 3.7 High-Field Effects 75 -- Part II Semiconductor Devices -- Chapter 4 p--n Junction 84 -- 4.1 Basic Fabrication Steps 85 -- 4.2 Thermal Equilibrium Condition 88 -- 4.3 Depletion Region 93 -- 4.4 Depletion Capacitance 100 -- 4.5 Current-Voltage Characteristics 104 -- 4.6 Charge Storage and Transient Behavior 114 -- 4.7 Junction Breakdown 117 -- 4.8 Heterojunction 124 -- Chapter 5 Bipolar Transistor and Related Devices 130 -- 5.1 Transistor Action 131 -- 5.2 Static Characteristics of Bipolar Transistor 137 -- 5.3 Frequency Response and Switching of Bipolar Transistor 146 -- 5.4 Heterojunction Bipolar Transistor 151 -- 5.5 Thyristor and Related Power Devices 156 -- Chapter 6 MOSFET and Related Devices 169 -- 6.1 MOS Diode 170 -- 6.2 MOSFET Fundamentals 186 -- 6.3 MOSFET Scaling 199 -- 6.4 CMOS and BiCMOS 205 -- 6.5 MOSFET on Insulator 209 -- 6.6 MOS Memory Structures 214 -- 6.7 Power MOSFET 218 -- Chapter 7 MESFET and Related Devices 224 -- 7.1 Metal-Semiconductor Contacts 225 -- 7.2 MESFET 237 -- 7.3 MODFET 247 -- Chapter 8 Microwave Diodes, Quantum-Effect, and Hot-Electron Devices 254 -- 8.1 Basic Microwave Technology 255 -- 8.2 Tunnel Diode 259 -- 8.3 IMPATT Diode 261 -- 8.4 Transferred-Electron Devices 264 -- 8.5 Quantum-Effect Devices 270 -- 8.6 Hot-Electron Devices 275 -- Chapter 9 Photonic Devices 282 -- 9.1 Radiative Transitions and Optical Absorption 282 -- 9.2 Light-Emitting Diodes 288 -- 9.3 Semiconductor Laser 298 -- 9.4 Photodetector 311 -- 9.5 Solar Cell 318 -- Part III Semiconductor Technology -- Chapter 10 Crystal Growth and Epitaxy 332 -- 10.1 Silicon Crystal Growth from the Melt 333 -- 10.2 Silicon Float-Zone Process 339 -- 10.3 GaAs Crystal-Growth Techniques 343 -- 10.4 Material Characterization 347 -- 10.5 Epitaxial-Growth Techniques 354 -- 10.6 Structures and Defects in Epitaxial Layers 361 -- Chapter 11 Film Formation 369 -- 11.1 Thermal Oxidation 370 -- 11.2 Dielectric Deposition 378 -- 11.3 Polysilicon Deposition 388 -- 11.4 Metallization 390 -- Chapter 12 Lithography and Etching 404 -- 12.1 Optical Lithography 404 -- 12.2 Next-Generation Lithographic Methods 418 -- 12.3 Wet Chemical Etching 426 -- 12.4 Dry Etching 431 -- 12.5 Microelectromechanical Systems 443 -- Chapter 13 Impurity Doping 452 -- 13.1 Basic Diffusion Process 453 -- 13.2 Extrinsic Diffusion 462 -- 13.3 Diffusion-Related Processes 466 -- 13.4 Range of Implanted Ions 469 -- 13.5 Implant Damage and Annealing 477 -- 13.6 Implantation-Related Processes 481 -- Chapter 14 Integrated Devices 489 -- 14.1 Passive Components 491 -- 14.2 Bipolar Technology 496 -- 14.3 Mosfet Technology 503 -- 14.4 Mesfet Technology 519 -- 14.5 Challenges for Microelectronics 522 -- Appendix B International Systems of Units (SI Units) 533 -- Appendix C Unit Prefixes 534 -- Appendix D Greek Alphabet 535 -- Appendix E Physical Constants 536 -- Appendix F Properties of Important Element and Binary Compound Semiconductors at 300 K 537 -- Appendix G Properties of Si and GaAs at 300 K 538 -- Appendix H Derivation of the Density of States in ar Semiconductor 539 -- Appendix I Derivation of Recombination Rate for Indirect Recombination 541 -- Appendix J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode 543 -- Appendix K Basic Kinetic Theory of Gases 545.

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