TY  - BOOK
AU  - Sze,S.M.
TI  - Semiconductor devices, physics and technology
SN  - 0471333727 (cloth : alk. paper)
AV  - TK7871.85 .S9883 2002
U1  - 621.3815/2 21
PY  - 2002///
CY  - New York
PB  - Wiley
KW  - Semiconductors
N1  - Includes bibliographical references and index; 1.1; Semiconductor Devices; 1 --; 1.2; Semiconductor Technology; 7 --; Part I; Semiconductor Physics --; Chapter 2; Energy Bands and Carrier Concentration in Thermal Equilibrium; 17 --; 2.1; Semiconductor Materials; 17 --; 2.2; Basic Crystal Structure; 19 --; 2.3; Basic Crystal Growth Technique; 24 --; 2.4; Valence Bonds; 27 --; 2.5; Energy Bands; 28 --; 2.6; Intrinsic Carrier Concentration; 34 --; 2.7; Donors and Acceptors; 37 --; Chapter 3; Carrier Transport Phenomena; 47 --; 3.1; Carrier Drift; 48 --; 3.2; Carrier Diffusion; 57 --; 3.3; Generation and Recombination Processes; 60 --; 3.4; Continuity Equation; 66 --; 3.5; Thermionic Emission Process; 72 --; 3.6; Tunneling Process; 73 --; 3.7; High-Field Effects; 75 --; Part II; Semiconductor Devices --; Chapter 4; p--n Junction; 84 --; 4.1; Basic Fabrication Steps; 85 --; 4.2; Thermal Equilibrium Condition; 88 --; 4.3; Depletion Region; 93 --; 4.4; Depletion Capacitance; 100 --; 4.5; Current-Voltage Characteristics; 104 --; 4.6; Charge Storage and Transient Behavior; 114 --; 4.7; Junction Breakdown; 117 --; 4.8; Heterojunction; 124 --; Chapter 5; Bipolar Transistor and Related Devices; 130 --; 5.1; Transistor Action; 131 --; 5.2; Static Characteristics of Bipolar Transistor; 137 --; 5.3; Frequency Response and Switching of Bipolar Transistor; 146 --; 5.4; Heterojunction Bipolar Transistor; 151 --; 5.5; Thyristor and Related Power Devices; 156 --; Chapter 6; MOSFET and Related Devices; 169 --; 6.1; MOS Diode; 170 --; 6.2; MOSFET Fundamentals; 186 --; 6.3; MOSFET Scaling; 199 --; 6.4; CMOS and BiCMOS; 205 --; 6.5; MOSFET on Insulator; 209 --; 6.6; MOS Memory Structures; 214 --; 6.7; Power MOSFET; 218 --; Chapter 7; MESFET and Related Devices; 224 --; 7.1; Metal-Semiconductor Contacts; 225 --; 7.2; MESFET; 237 --; 7.3; MODFET; 247 --; Chapter 8; Microwave Diodes, Quantum-Effect, and Hot-Electron Devices; 254 --; 8.1; Basic Microwave Technology; 255 --; 8.2; Tunnel Diode; 259 --; 8.3; IMPATT Diode; 261 --; 8.4; Transferred-Electron Devices; 264 --; 8.5; Quantum-Effect Devices; 270 --; 8.6; Hot-Electron Devices; 275 --; Chapter 9; Photonic Devices; 282 --; 9.1; Radiative Transitions and Optical Absorption; 282 --; 9.2; Light-Emitting Diodes; 288 --; 9.3; Semiconductor Laser; 298 --; 9.4; Photodetector; 311 --; 9.5; Solar Cell; 318 --; Part III; Semiconductor Technology --; Chapter 10; Crystal Growth and Epitaxy; 332 --; 10.1; Silicon Crystal Growth from the Melt; 333 --; 10.2; Silicon Float-Zone Process; 339 --; 10.3; GaAs Crystal-Growth Techniques; 343 --; 10.4; Material Characterization; 347 --; 10.5; Epitaxial-Growth Techniques; 354 --; 10.6; Structures and Defects in Epitaxial Layers; 361 --; Chapter 11; Film Formation; 369 --; 11.1; Thermal Oxidation; 370 --; 11.2; Dielectric Deposition; 378 --; 11.3; Polysilicon Deposition; 388 --; 11.4; Metallization; 390 --; Chapter 12; Lithography and Etching; 404 --; 12.1; Optical Lithography; 404 --; 12.2; Next-Generation Lithographic Methods; 418 --; 12.3; Wet Chemical Etching; 426 --; 12.4; Dry Etching; 431 --; 12.5; Microelectromechanical Systems; 443 --; Chapter 13; Impurity Doping; 452 --; 13.1; Basic Diffusion Process; 453 --; 13.2; Extrinsic Diffusion; 462 --; 13.3; Diffusion-Related Processes; 466 --; 13.4; Range of Implanted Ions; 469 --; 13.5; Implant Damage and Annealing; 477 --; 13.6; Implantation-Related Processes; 481 --; Chapter 14; Integrated Devices; 489 --; 14.1; Passive Components; 491 --; 14.2; Bipolar Technology; 496 --; 14.3; Mosfet Technology; 503 --; 14.4; Mesfet Technology; 519 --; 14.5; Challenges for Microelectronics; 522 --; Appendix B; International Systems of Units (SI Units); 533 --; Appendix C; Unit Prefixes; 534 --; Appendix D; Greek Alphabet; 535 --; Appendix E; Physical Constants; 536 --; Appendix F; Properties of Important Element and Binary Compound Semiconductors at 300 K; 537 --; Appendix G; Properties of Si and GaAs at 300 K; 538 --; Appendix H; Derivation of the Density of States in ar Semiconductor; 539 --; Appendix I; Derivation of Recombination Rate for Indirect Recombination; 541 --; Appendix J; Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode; 543 --; Appendix K; Basic Kinetic Theory of Gases; 545
UR  - http://catdir.loc.gov/catdir/bios/wiley042/2001026003.html
UR  - http://catdir.loc.gov/catdir/description/wiley034/2001026003.html
UR  - http://catdir.loc.gov/catdir/toc/onix05/2001026003.html
ER  -