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008 | 020517s2002 nyua b 001 0 eng | ||
010 | _a 2002280958 | ||
040 |
_aUKM _beng _cUKM _dDLC _dOIP _dTXA _dIXA _dC#P _dUBA _dBAKER _dBTCTA _dLVB _dYDXCP _dOCLCG _dEXW _dOCLCQ _dOCLCO _dOCLCF |
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020 | _a0471415413 (alk. paper) | ||
020 | _a9780471415411 (alk. paper) | ||
035 | _a(OCoLC)48752575 | ||
042 | _alccopycat | ||
050 | 0 | 0 |
_aTK7871.85 _b.B684 2002 |
082 | 0 | 0 |
_a621.3815/2 _221 |
100 | 1 |
_aBrennan, Kevin F., _d1956- |
|
245 | 1 | 0 |
_aTheory of modern electronic semiconductor devices / _cKevin F. Brennan, April S. Brown. |
260 |
_aNew York : _bJohn Wiley, _cc2002. |
||
300 |
_axiii, 448 p. : _bill. ; _c24 cm. |
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500 | _a"A Wiley-Interscience publication." | ||
504 | _aIncludes bibliographical references (p. 419-431) and index. | ||
505 | 0 | 0 |
_tOverview of Semiconductor Device Trends -- _tMoore's Law and Its Implications -- _tSemiconductor Devices for Telecommunications -- _tDigital Communications -- _tSemiconductor Heterostructures -- _tFormation of Heterostructures -- _tModulation Doping -- _tTwo-Dimensional Subband Transport at Heterointerfaces -- _tStrain and Stress at Heterointerfaces -- _tPerpendicular Transport in Heterostructures and Superlattices -- _tHeterojunction Materials Systems: Intrinsic and Extrinsic Properties -- _tHeterostructure Field-Effect Transistors -- _tMotivation -- _tBasics of Heterostructure Field-Effect Transistors -- _tSimplified Long-Channel Model of a MODFET -- _tPhysical Features of Advanced State-of-the-Art MODFETs -- _tHigh-Frequency Performance of MODFETs -- _tMaterials Properties and Structure Optimization for HFETs -- _tHeterostructure Bipolar Transistors -- _tReview of Bipolar Junction Transistors -- _tEmitter-Base Heterojunction Bipolar Transistors -- _tBase Transport Dynamics -- _tNonstationary Transport Effects and Breakdown -- _tHigh-Frequency Performance of HBTs -- _tMaterials Properties and Structure Optimization for HBTs -- _tTransferred Electron Effects, Negative Differential Resistance, and Devices -- _tk-Space Transfer -- _tReal-Space Transfer -- _tConsequences of NDR in a Semiconductor -- _tTransferred Electron-Effect Oscillators: Gunn Diodes -- _tNegative Differential Resistance Transistors -- _tIMPATT Diodes -- _tResonant Tunneling and Devices -- _tPhysics of Resonant Tunneling: Qualitative Approach -- _tPhysics of Resonant Tunneling: Envelope Approximation. |
650 | 0 | _aSemiconductors. | |
700 | 1 | _aBrown, April S. | |
856 | 4 | 2 |
_3Contributor biographical information _uhttp://catdir.loc.gov/catdir/bios/wiley046/2002280958.html |
856 | 4 | 2 |
_3Publisher description _uhttp://catdir.loc.gov/catdir/description/wiley0310/2002280958.html |
856 | 4 | 1 |
_3Table of contents _uhttp://catdir.loc.gov/catdir/toc/wiley023/2002280958.html |
942 | _cBOOK | ||
994 |
_aZ0 _bSUPMU |
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596 | _a1 | ||
999 |
_c10578 _d10578 |