| 000 | 05539cam a22003494a 4500 | ||
|---|---|---|---|
| 001 | u5092 | ||
| 003 | SA-PMU | ||
| 005 | 20210418124757.0 | ||
| 008 | 010308s2002 nyua b 001 0 eng | ||
| 010 | _a 2001026003 | ||
| 040 |
_aDLC _beng _cDLC _dUKM _dC#P _dBAKER _dBTCTA _dYDXCP _dQ3H _dOCLCG _dIG# _dVA@ _dOCLCQ _dNLGGC |
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| 020 | _a0471333727 (cloth : alk. paper) | ||
| 020 | _a9780471333722 (cloth : alk. paper) | ||
| 035 |
_a(OCoLC)46456368 _z(OCoLC)47675568 _z(OCoLC)48195414 _z(OCoLC)52264190 |
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| 042 | _apcc | ||
| 050 | 0 | 0 |
_aTK7871.85 _b.S9883 2002 |
| 082 | 0 | 0 |
_a621.3815/2 _221 |
| 100 | 1 |
_aSze, S. M., _d1936- |
|
| 245 | 1 | 0 |
_aSemiconductor devices, physics and technology / _cS.M. Sze. |
| 250 | _a2nd ed. | ||
| 260 |
_aNew York : _bWiley, _cc2002. |
||
| 300 |
_aviii, 564 p. : _bill. (some col.) ; _c26 cm. |
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| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | 0 |
_g1.1 _tSemiconductor Devices _g1 -- _g1.2 _tSemiconductor Technology _g7 -- _gPart I _tSemiconductor Physics -- _gChapter 2 _tEnergy Bands and Carrier Concentration in Thermal Equilibrium _g17 -- _g2.1 _tSemiconductor Materials _g17 -- _g2.2 _tBasic Crystal Structure _g19 -- _g2.3 _tBasic Crystal Growth Technique _g24 -- _g2.4 _tValence Bonds _g27 -- _g2.5 _tEnergy Bands _g28 -- _g2.6 _tIntrinsic Carrier Concentration _g34 -- _g2.7 _tDonors and Acceptors _g37 -- _gChapter 3 _tCarrier Transport Phenomena _g47 -- _g3.1 _tCarrier Drift _g48 -- _g3.2 _tCarrier Diffusion _g57 -- _g3.3 _tGeneration and Recombination Processes _g60 -- _g3.4 _tContinuity Equation _g66 -- _g3.5 _tThermionic Emission Process _g72 -- _g3.6 _tTunneling Process _g73 -- _g3.7 _tHigh-Field Effects _g75 -- _gPart II _tSemiconductor Devices -- _gChapter 4 _tp--n Junction _g84 -- _g4.1 _tBasic Fabrication Steps _g85 -- _g4.2 _tThermal Equilibrium Condition _g88 -- _g4.3 _tDepletion Region _g93 -- _g4.4 _tDepletion Capacitance _g100 -- _g4.5 _tCurrent-Voltage Characteristics _g104 -- _g4.6 _tCharge Storage and Transient Behavior _g114 -- _g4.7 _tJunction Breakdown _g117 -- _g4.8 _tHeterojunction _g124 -- _gChapter 5 _tBipolar Transistor and Related Devices _g130 -- _g5.1 _tTransistor Action _g131 -- _g5.2 _tStatic Characteristics of Bipolar Transistor _g137 -- _g5.3 _tFrequency Response and Switching of Bipolar Transistor _g146 -- _g5.4 _tHeterojunction Bipolar Transistor _g151 -- _g5.5 _tThyristor and Related Power Devices _g156 -- _gChapter 6 _tMOSFET and Related Devices _g169 -- _g6.1 _tMOS Diode _g170 -- _g6.2 _tMOSFET Fundamentals _g186 -- _g6.3 _tMOSFET Scaling _g199 -- _g6.4 _tCMOS and BiCMOS _g205 -- _g6.5 _tMOSFET on Insulator _g209 -- _g6.6 _tMOS Memory Structures _g214 -- _g6.7 _tPower MOSFET _g218 -- _gChapter 7 _tMESFET and Related Devices _g224 -- _g7.1 _tMetal-Semiconductor Contacts _g225 -- _g7.2 _tMESFET _g237 -- _g7.3 _tMODFET _g247 -- _gChapter 8 _tMicrowave Diodes, Quantum-Effect, and Hot-Electron Devices _g254 -- _g8.1 _tBasic Microwave Technology _g255 -- _g8.2 _tTunnel Diode _g259 -- _g8.3 _tIMPATT Diode _g261 -- _g8.4 _tTransferred-Electron Devices _g264 -- _g8.5 _tQuantum-Effect Devices _g270 -- _g8.6 _tHot-Electron Devices _g275 -- _gChapter 9 _tPhotonic Devices _g282 -- _g9.1 _tRadiative Transitions and Optical Absorption _g282 -- _g9.2 _tLight-Emitting Diodes _g288 -- _g9.3 _tSemiconductor Laser _g298 -- _g9.4 _tPhotodetector _g311 -- _g9.5 _tSolar Cell _g318 -- _gPart III _tSemiconductor Technology -- _gChapter 10 _tCrystal Growth and Epitaxy _g332 -- _g10.1 _tSilicon Crystal Growth from the Melt _g333 -- _g10.2 _tSilicon Float-Zone Process _g339 -- _g10.3 _tGaAs Crystal-Growth Techniques _g343 -- _g10.4 _tMaterial Characterization _g347 -- _g10.5 _tEpitaxial-Growth Techniques _g354 -- _g10.6 _tStructures and Defects in Epitaxial Layers _g361 -- _gChapter 11 _tFilm Formation _g369 -- _g11.1 _tThermal Oxidation _g370 -- _g11.2 _tDielectric Deposition _g378 -- _g11.3 _tPolysilicon Deposition _g388 -- _g11.4 _tMetallization _g390 -- _gChapter 12 _tLithography and Etching _g404 -- _g12.1 _tOptical Lithography _g404 -- _g12.2 _tNext-Generation Lithographic Methods _g418 -- _g12.3 _tWet Chemical Etching _g426 -- _g12.4 _tDry Etching _g431 -- _g12.5 _tMicroelectromechanical Systems _g443 -- _gChapter 13 _tImpurity Doping _g452 -- _g13.1 _tBasic Diffusion Process _g453 -- _g13.2 _tExtrinsic Diffusion _g462 -- _g13.3 _tDiffusion-Related Processes _g466 -- _g13.4 _tRange of Implanted Ions _g469 -- _g13.5 _tImplant Damage and Annealing _g477 -- _g13.6 _tImplantation-Related Processes _g481 -- _gChapter 14 _tIntegrated Devices _g489 -- _g14.1 _tPassive Components _g491 -- _g14.2 _tBipolar Technology _g496 -- _g14.3 _tMosfet Technology _g503 -- _g14.4 _tMesfet Technology _g519 -- _g14.5 _tChallenges for Microelectronics _g522 -- _gAppendix B _tInternational Systems of Units (SI Units) _g533 -- _gAppendix C _tUnit Prefixes _g534 -- _gAppendix D _tGreek Alphabet _g535 -- _gAppendix E _tPhysical Constants _g536 -- _gAppendix F _tProperties of Important Element and Binary Compound Semiconductors at 300 K _g537 -- _gAppendix G _tProperties of Si and GaAs at 300 K _g538 -- _gAppendix H _tDerivation of the Density of States in ar Semiconductor _g539 -- _gAppendix I _tDerivation of Recombination Rate for Indirect Recombination _g541 -- _gAppendix J _tCalculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode _g543 -- _gAppendix K _tBasic Kinetic Theory of Gases _g545. |
| 650 | 0 | _aSemiconductors. | |
| 856 | 4 | 2 |
_3Contributor biographical information _uhttp://catdir.loc.gov/catdir/bios/wiley042/2001026003.html |
| 856 | 4 | 2 |
_3Publisher description _uhttp://catdir.loc.gov/catdir/description/wiley034/2001026003.html |
| 856 | 4 | 1 |
_3Table of contents _uhttp://catdir.loc.gov/catdir/toc/onix05/2001026003.html |
| 942 | _cBOOK | ||
| 994 |
_aZ0 _bSUPMU |
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| 596 | _a1 | ||
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_c9634 _d9634 |
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