"A Wiley-Interscience publication."

Includes bibliographical references (p. 419-431) and index.

Overview of Semiconductor Device Trends -- Moore's Law and Its Implications -- Semiconductor Devices for Telecommunications -- Digital Communications -- Semiconductor Heterostructures -- Formation of Heterostructures -- Modulation Doping -- Two-Dimensional Subband Transport at Heterointerfaces -- Strain and Stress at Heterointerfaces -- Perpendicular Transport in Heterostructures and Superlattices -- Heterojunction Materials Systems: Intrinsic and Extrinsic Properties -- Heterostructure Field-Effect Transistors -- Motivation -- Basics of Heterostructure Field-Effect Transistors -- Simplified Long-Channel Model of a MODFET -- Physical Features of Advanced State-of-the-Art MODFETs -- High-Frequency Performance of MODFETs -- Materials Properties and Structure Optimization for HFETs -- Heterostructure Bipolar Transistors -- Review of Bipolar Junction Transistors -- Emitter-Base Heterojunction Bipolar Transistors -- Base Transport Dynamics -- Nonstationary Transport Effects and Breakdown -- High-Frequency Performance of HBTs -- Materials Properties and Structure Optimization for HBTs -- Transferred Electron Effects, Negative Differential Resistance, and Devices -- k-Space Transfer -- Real-Space Transfer -- Consequences of NDR in a Semiconductor -- Transferred Electron-Effect Oscillators: Gunn Diodes -- Negative Differential Resistance Transistors -- IMPATT Diodes -- Resonant Tunneling and Devices -- Physics of Resonant Tunneling: Qualitative Approach -- Physics of Resonant Tunneling: Envelope Approximation.

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